Dispersants for silicon carbide in water—A comparative study

Silicon Nitride and Silicon Carbide

Porous Silicon Carbide for MEMS

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hy...

Boron carbide/n-silicon carbide heterojunction diodes

Silicon carbide microdisk resonator.

We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC. Our simulations show that the device exhibits great potential for cavity optomechanical applications.

Silicon Carbide Neutron Detectors

The potential of Silicon Carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. In fact, the first SiC neutron detector was demonstrated more than fifty years ago (Babcock, et al., 1957; Babcock & Chang, 1963). This detector was shown to be operational in limited testing at temperatures up to 700 oC. Unfortunately, further development was limited by the poo...